发明名称 |
Nitride semiconductor device |
摘要 |
A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal. |
申请公布号 |
US2006261355(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060436026 |
申请日期 |
2006.05.18 |
申请人 |
NICHIA CORPORATION |
发明人 |
KUSUSE TAKESHI;AIHARA YOSHIYUKI;SANGA DAISUKE;DEGUCHI KOUICHIROH |
分类号 |
H01L33/06;H01L33/14;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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