发明名称 |
Formation of self-aligned contact plugs |
摘要 |
Methods of forming a contact structure for semiconductor assemblies are described. One method provides process steps to create an inner dielectric isolation layer after the contact region is protected, which is followed by the formation of the self-aligned contact structures. A second method provides process steps to create an inner dielectric isolation layer after the self-aligned contact structures are formed.
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申请公布号 |
US2006264032(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060495652 |
申请日期 |
2006.07.28 |
申请人 |
KIM HYUN T;BURGESS BYRON N |
发明人 |
KIM HYUN T.;BURGESS BYRON N. |
分类号 |
H01L21/4763;H01L21/336;H01L21/44;H01L21/60 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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