NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A nitride semiconductor device (100) is provided with an n-GaN substrate (1); a semiconductor multilayer structure which is formed on a main plane of the n-GaN substrate (1) and includes a p-type region and an n-type region; a p-side electrode (32) in contact with a part of the p-type region included in the semiconductor multilayer structure; and an n-side electrode (34) provided on a rear plane of the substrate (1). The rear plane of the substrate (1) includes a rough surface region (40a) and a flat surface region (40b), and the n-side electrode (34) covers at least a part of the rough surface region (40a).