发明名称 LOW TEMPERATURE PLASMA DEPOSITION PROCESS FOR CARBON LAYER DEPOSITION
摘要 <p>A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.</p>
申请公布号 WO2006124967(A2) 申请公布日期 2006.11.23
申请号 WO2006US19029 申请日期 2006.05.16
申请人 APPLIED MATERIALS, INC. 发明人 RAMASWAMY, KARTIK;HANAWA, HIROJI;GALLO, BIAGIO;COLLINS, KENNETH, S.;MA, KAI;PARIHAR, VIJAY;JENNINGS, DEAN;MAYUR, ABHILASH;AL-BAYATI, AMIR;NGUYEN, ANDREW
分类号 H01L21/31 主分类号 H01L21/31
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