GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
摘要
<p>A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.</p>
申请公布号
WO2006124387(A2)
申请公布日期
2006.11.23
申请号
WO2006US17823
申请日期
2006.05.09
申请人
RAYTHEON COMPANY;HOKE, WILLIAM, E.;MOSCA, JOHN, J.