发明名称 |
Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing |
摘要 |
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.
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申请公布号 |
US2006261399(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20050134540 |
申请日期 |
2005.05.20 |
申请人 |
WIDJAJA YUNIARTO;COOKSEY JOHN W;CHEN CHANGYUAN;GAO FENG;LIN YA-FEN;LEE DANA |
发明人 |
WIDJAJA YUNIARTO;COOKSEY JOHN W.;CHEN CHANGYUAN;GAO FENG;LIN YA-FEN;LEE DANA |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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地址 |
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