发明名称 |
Use of Cl2 and/or HCl during silicon epitaxial film formation |
摘要 |
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
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申请公布号 |
US2006260538(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060494903 |
申请日期 |
2006.07.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YE ZHIYUAN;KIM YIHWAN;LI XIAOWEI;ZOJAJI ALI;DALIDA NICHOLAS C.;TANG JINSONG;CHEN XIAO;SAMOILOV ARKADII V. |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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