METHOD OF TREATING LOW-K DIELECTRIC LAYER WITH BORON-CONTAINING GAS

摘要

A low-k interlayer dielectric processing method is provided to remove fluorine from an FSG(Fluorinated Silica Glass) layer by inducing the reaction of boron on fluorine using boron based gas. A copper line(16) is formed on a lower interlayer dielectric. A capping layer(14) is formed on the resultant structure. An upper interlayer dielectric(13) is formed on the capping layer. The upper interlayer dielectric is made of an FSG layer. Fluorine elements are removed from the FSG layer by exposing the FSG layer to a boron based gas condition. The lower interlayer dielectric is composed of an SiOC layer and an USG(Undoped Silica Glass) layer. B2H6 gas is used as the boron based gas.