| 摘要 |
A semiconductor device and a method for manufacturing the same, in which degradation of performance of the interconnect structure caused by damage introduced to the low k interlevel insulator is suppressed, is disclosed. The semiconductor device comprises a low dielectric constant insulator formed with at least one of a wiring trench and contact hole therein and including a recovered layer in the vicinity of a surface of the wiring trench and/or contact hole by treating to make a carbon concentration and/or film density therein being equal to or higher than those in the inside of the insulator, a conductive layer formed in the wiring trench and/or contact hole, a barrier metal interposed between the low dielectric constant insulator and the conductive layer, and a second insulator interposed between the barrier metal and the low dielectric constant insulator.
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