发明名称 Siloxane-based resin and a semiconductor interlayer insulating film using the same
摘要 A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.
申请公布号 US2006264595(A1) 申请公布日期 2006.11.23
申请号 US20060431707 申请日期 2006.05.11
申请人 LYU YI Y;SONG KI Y;RYU JOON S;SEON JONG B 发明人 LYU YI Y.;SONG KI Y.;RYU JOON S.;SEON JONG B.
分类号 C08G77/50;C08L83/04;B32B17/02;B32B25/20;B32B27/00;C08G77/04;C09D183/04;C09D183/14;H01B3/46;H01L21/00;H01L21/31;H01L21/312;H01L21/469;H01L21/768;H01L23/522 主分类号 C08G77/50
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