| 发明名称 |
Semiconductors bonded on glass substrates |
| 摘要 |
A method includes providing a glass substrate and bonding a semiconductor layer to the glass substrate. The semiconductor layer is formed to a thickness such that it does not yield due to temperature-induced strain at device processing temperatures.
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| 申请公布号 |
US2006263994(A1) |
申请公布日期 |
2006.11.23 |
| 申请号 |
US20060493128 |
申请日期 |
2006.07.26 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD |
| 分类号 |
H01L21/8222;H01L21/20;H01L21/336;H01L21/84;H01L27/01;H01L27/12;H01L29/786;H01L31/0392 |
主分类号 |
H01L21/8222 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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