| 摘要 |
A gate oxide film, a gate electrode and low-concentration N type diffusion layers are first formed in a device forming region of a P type silicon substrate. A insulating film is deposited over them and anisotropically etched to form sidewalls. Subsequently, a gate oxide film, a gate electrode and low-concentration N type diffusion layers are formed in a device forming region. An insulating film is deposited over them and anisotropically etched to form sidewalls. The insulating film for the sidewalls and the insulating film for the sidewalls are deposited in discrete processes and the thicknesses of these insulating films are individually adjusted, whereby the widths of the sidewalls can be set to arbitrary values respectively. Thereafter, high-concentration impurity regions are formed on a self-alignment basis by ion implantation.
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