发明名称 |
Memory devices having reduced coupling noise between wordlines |
摘要 |
Memory devices configured to reduce coupling noise between adjacent wordlines in a memory array. More specifically, wordline drivers are interleaved such that adjacent wordlines are driven by wordline drivers enabled by different row decoders. Each wordline driver includes a weak transistor to ground and a strong transistor to ground. By disabling the wordline driver on the wordlines directly adjacent to the active wordlines, a path is provided to drive the coupling noise from the active wordline to ground through the strong transistor.
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申请公布号 |
US2006262636(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060497126 |
申请日期 |
2006.08.01 |
申请人 |
KIM TAE H;INGALLS CHARLES L;KIRSCH HOWARD C;GUM JEREMY J |
发明人 |
KIM TAE H.;INGALLS CHARLES L.;KIRSCH HOWARD C.;GUM JEREMY J. |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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