| 摘要 |
A process for producing a thin film in which an oxide thin film with excellent properties is produced by accomplishing a reduction of oxygen deficit and promotion of epitaxial growth in the oxide thin film. There is provided a process comprising feeding a mixed gas consisting of a raw material gas, a carrier gas and an oxidative gas, through gas activation means maintained at a temperature free from raw material liquefaction, precipitation and film formation by heating means, from a shower plate onto a heated substrate in a reaction chamber so as to effect reaction, thereby forming an oxide thin film on the substrate. In this process, the ratio of oxidative gas is 60% or greater based on the mixed gas. When it is intended to form an initial layer by nucleation, the formation is carried out while setting the oxidative gas flow rate ratio during the film forming process for less than 60% and while setting the oxidative gas flow rate ratio during the subsequent film forming process for 60% or more. There is further provided an oxide thin film production apparatus comprising a mixer and a shower plate and, interposed therebetween, heating means.
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