Power Semiconductor Component with Plate Capacitor Structure

摘要

A power semiconductor component ( 1 ) contains a weakly doped drift zone ( 9 ), a drain zone ( 10 ) and a MOS structure ( 12 ) situated at the front side ( 2 ) of the power semiconductor component ( 1 ). An edge plate ( 6 ) of the first conductivity type is provided at its edge ( 8 ) above the drift zone ( 9 ). The edge plate ( 6 ) is doped more highly than the drift zone ( 9 ). Situated above the edge plate ( 6 ) is an insulation layer ( 24 ) with an overlying field plate ( 7 ) made of polysilicon. The field plate ( 7 ) forms together with the edge plate ( 6 ) a plate capacitor structure which increases the drain-source output capacitance of the power semiconductor component ( 1 ), so that fewer radiofrequency interference disturbances are caused by the power semiconductor component ( 1 ) during switching.