| 发明名称 |
Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd |
| 摘要 |
The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
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| 申请公布号 |
US2006264059(A1) |
申请公布日期 |
2006.11.23 |
| 申请号 |
US20060568461 |
申请日期 |
2006.02.15 |
| 申请人 |
KOBAYASHI YASUO;KAWAMURA KOHEI;OHMI TADAHIRO;TERAMOTO AKINOBU;SUGIMOTO TATSUYA;YAMADA TOSHIRO;TANAKA KIMIAKI |
发明人 |
KOBAYASHI YASUO;KAWAMURA KOHEI;OHMI TADAHIRO;TERAMOTO AKINOBU;SUGIMOTO TATSUYA;YAMADA TOSHIRO;TANAKA KIMIAKI |
| 分类号 |
H01L23/58;H01L21/31;H01L21/314 |
主分类号 |
H01L23/58 |
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