| 摘要 |
A method for forming a conductive line of a semiconductor device is provided to improve uniformity of a top profile and to reduce process time by using a single chamber due to in-situ processing. A conductive layer(120) and a hard mask layer(130) are sequentially formed on a semiconductor substrate(100). A photoresist pattern for defining a conductive line is formed on the hard mask layer. The hard mask pattern is formed by etching the hard mask layer using the photoresist pattern, and the conductive layer is etched by using the hard mask pattern as a mask. At this time, these steps are performed by in-situ processing using a microwave ECR(Electron Cyclotron Resonance) source plasma chamber.
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