发明名称 Electrode substrate, thin-film transistor, display and its production method
摘要 Using a lower electrode as a photomask, a yophobic region having generally the same pattern as that of the lower electrode and a yophibic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the yophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.
申请公布号 US2006261334(A1) 申请公布日期 2006.11.23
申请号 US20060569834 申请日期 2006.02.28
申请人 ANDO MASAHIKO;ADACHI MASAYA;SASAKI HIROSHI;WAKAGI MASATOSHI 发明人 ANDO MASAHIKO;ADACHI MASAYA;SASAKI HIROSHI;WAKAGI MASATOSHI
分类号 H01L29/04;G06K19/00;G09F9/30;H01L21/3205;H01L21/336;H01L21/77;H01L27/12;H01L29/786;H01L51/40 主分类号 H01L29/04
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