发明名称 |
Method to chemically remove metal impurities from polycide gate sidewalls |
摘要 |
An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also relates to a gate stack structure that provides a composition that resists the redeposition of metal during processing and field use.
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申请公布号 |
US2006261500(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060494844 |
申请日期 |
2006.07.28 |
申请人 |
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发明人 |
GONZALEZ FERNANDO;POWELL DON C. |
分类号 |
H01L21/4763;H01L21/28;H01L21/31;H01L21/3213;H01L29/49 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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