发明名称 Semiconductor device
摘要 By stably separating a melting location of a fuse ( 3 ) from conductive layers ( 5 A, 5 B), reliable melting of the fuse ( 3 ) is enabled. A fuse ( 3 ) including a fuse body ( 3 A) and two pads ( 3 Ba, 3 Bb) connected by this and two conductive layers ( 5 A, 5 B) individually connected to the two pads ( 3 Ba, 3 Bb) are formed in a multilayer structure on a semiconductor substrate ( 1 ). A length of the fuse body ( 3 A) is defined so that the melting location of the fuse ( 3 ) becomes positioned in the fuse body ( 3 A) away from the region overlapped on the conductive layer ( 5 A or 5 B) when an electrical stress is applied between two conductive layers ( 5 A, 5 B) and the fuse ( 3 ) is melted.
申请公布号 US2006263986(A1) 申请公布日期 2006.11.23
申请号 US20050550796 申请日期 2005.09.22
申请人 SONY CORPORATION 发明人 MORI HIDEKI;EJIRI HIROKAZU;AZAMI KENJI;OHNO TERUKAZU;YOSHITAKE NOBUYUKI
分类号 H01L21/3205;H01L27/10;H01L21/336;H01L21/82;H01L21/822;H01L23/52;H01L23/525;H01L27/04 主分类号 H01L21/3205
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