发明名称 |
Masking methods |
摘要 |
The invention includes masking methods. In one implementation, a masking material which includes boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking material includes at least about 0.5 atomic per cent boron. The masking material is substantially anisotropically etched effective to form an anisotropically etched sidewall spacer which includes the boron doped amorphous carbon on a sidewall of the feature. The substrate is then processed proximate the spacer while using the boron doped amorphous carbon-including spacer as a mask. After processing the substrate proximate the spacer, the boron doped amorphous carbon-including spacer is etched from the substrate. Other implementations and aspects are contemplated.
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申请公布号 |
US2006264018(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060497585 |
申请日期 |
2006.07.31 |
申请人 |
YIN ZHIPING;SANDHU GURTEJ S |
发明人 |
YIN ZHIPING;SANDHU GURTEJ S. |
分类号 |
H01L21/3205;H01L21/033;H01L21/308;H01L21/31;H01L21/311;H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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