| 摘要 |
Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase. |
| 申请人 |
APPLIED MATERIALS, INC.;JIA, RENHE;WANG, ZHIHONG;TIAN, YUAN;TRAN, HUYEN, KAREN;MAO, DAXIN;TSAI, STAN D.;KARUPPIAH, LAKSH;CHEN, LIANG-YUH |
发明人 |
JIA, RENHE;WANG, ZHIHONG;TIAN, YUAN;TRAN, HUYEN, KAREN;MAO, DAXIN;TSAI, STAN D.;KARUPPIAH, LAKSH;CHEN, LIANG-YUH |
