Charge carrier life adjusting method for use in e.g. thyristor, involves heating one of areas of semiconductor body with laser light by irradiating one of surfaces of semiconductor body to heal defects in surface

摘要

The method involves irradiating a semiconductor body with particles over one of surfaces (101, 102) of the body, so that defects are produced in the semiconductor body, where the particles are electrons, protons and helium ions. One of the areas of the semiconductor body is heated with laser light on a temperature more than 400 degree Celsius by irradiating the surface of the semiconductor body to heal the defects in the surface.