PROCESS FOR PRODUCING SILICON COMPOUND

摘要

This invention provides a process for producing a silicon compound that can reduce the number of steps as much as possible and can form a desired compound in a low-temperature environment. The production process comprises allowing a radical of a halogen gas to act in the state of being kept at a relatively high temperature to an etching member (11), which is disposed within a chamber (1) and is formed of a material containing an element capable of forming a compound with Si, to produce a gas of a precursor (24), which is a compound between the above material and the halogen, while an Si interface is exposed to hold the temperature of a substrate (3) housed within the chamber (1) at a relatively low temperature to adsorb the precursor (24) onto the Si interface of the substrate (3), and then allowing the radical of the halogen gas to act on the precursor (24) adsorbed onto the Si interface to reduce the precursor (24) and thus to produce a compound between the above material and Si.