发明名称 Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
摘要 A rail clamp circuit ( 100 ) includes first and second power supply voltage rails, a multiple independent gate field effect transistor (MIGFET) ( 128 ), and an ESD event detector circuit ( 138 ). The MIGFET ( 128 ) has a source/drain path coupled between the first ( 112 ) and second ( 114 ) power supply voltage rails, and first and second gates. The ESD event detector circuit ( 138 ) is coupled between the first ( 112 ) and second ( 114 ) power supply voltage rails, and has first and second output terminals respectively coupled to the first and second gates of the MIGFET. In response to an electrostatic discharge (ESD) event between the first ( 112 ) and second ( 114 ) power supply voltage rails, the ESD event detector circuit ( 138 ) provides a voltage to the second gate to lower an absolute threshold voltage of the MIGFET ( 128 ) while providing a voltage to the first gate above the absolute threshold voltage so lowered, thereby making the MIGFET ( 128 ) conductive with relatively high conductivity.
申请公布号 US2006262469(A1) 申请公布日期 2006.11.23
申请号 US20050130873 申请日期 2005.05.17
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 KHAZHINSKY MICHAEL G.;MATHEW LEO
分类号 H02H9/00 主分类号 H02H9/00
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