| 摘要 |
Provided is a transistor structure which is capable of avoiding electric field concentration without increase in cell size and of enlarging its safe operating area and in addition, of decreasing the saturation voltage across a collector and a emitter more than in the case of a conventional ballast resistor layout method. A first base wiring and a second base wiring are connected to each other, not by a conductive material, but by only a base layer, and the base layer through which the first base wiring and the second base wiring are connected, functions as a ballast resistor. This makes it possible to avoid the electric field concentration without increase in cell size and to enlarge its safe operating area and in addition, to decrease the saturation voltage across the collector and the emitter more than in a case of the conventional ballast resistor layout method.
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