| 摘要 |
A semiconductor device for a SRAM cell, the device having an active region (110) and a gate head (106), and a shared contact (30) therebetween for connection to a common supply voltage. The contact (30) is formed as an elongate, substantially rectangular, contact by means of an optical proximity connection (OPC) technique. An end of the contact (30) overlaying the gate head (106) is provided with a lateral extension (30a) (by means of phase shifting the mask used to form the contact) so as to extend the surface contact area between the lateral extension (30a) and the gate head (106). |
