LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF, INTEGRATED LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF, NITRIDE-BASED III-V COMPOUND SEMICONDUCTOR DEPOSITION METHOD, LIGHT SOURCE CELL UNIT, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE DISPLAY, AND ELECTRONIC EQUIPMENTS

摘要

A light emitting diode and a manufacturing method thereof, an integrated light emitting diode and a manufacturing method thereof, a nitride-based III-V group compound semiconductor growing method, a light source cell unit, a light emitting diode bask-light, a light emitting diode display, and an electronic apparatus are provided to increase emitting efficiency by removing an interval between a first nitride-based III-V group compound semiconductor layer and a second nitride-based III-V group compound semiconductor layer. A first nitride-based III-V group compound semiconductor layer is grown at a concave portion(11a) of a substrate(11) to fill the concave portion. A second nitride-based III-V group compound semiconductor layer is grown on the substrate from the first nitride-based III-V group compound semiconductor layer in a transverse direction. A third nitride-based III-V group compound semiconductor layer and an active layer of first conductivity and a fourth nitride-based III-V group compound semiconductor layer of second conductivity are sequentially on the second nitride-based III-V group compound semiconductor layer.