| 摘要 |
A cathode substrate ( 10 ) and gate substrate ( 30 ) are arranged such that at least gate ribs ( 12 ) abut against cathode ribs ( 34 ) and gate electrodes ( 35 ) and, depending on the case, the cathode ribs ( 34 ) abut against cathodes ( 13 ). The gate ribs ( 12 ) and cathode ribs ( 34 ) can be formed to heights of about 5 mum to 300 mum. The gate ribs ( 12 ) can be surface-polished so their heights are uniform. The distance between the cathode electrodes ( 13 ) and gate electrodes ( 35 ) can accordingly be made uniform and short, so driving at a low voltage and an increase in luminance uniformity can be realized.
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