发明名称 Nonvolatile semiconductor memory device
摘要 A nonvolatile memory apparatus which includes plural memories one of which is a nonvolatile memory such as a Flash EEPROM capable of being specified a plurality of operations from a processing unit of the apparatus including an erase operation, the erase operation in the nonvolatile memory performs a threshold voltage moving operation and a verify operation, and the nonvolatile memory is capable of releasing the I/O bus during the erase operation to thereby allow accessing of other memories and/or system components. For example, during this erase operation, the Flash EEPROM is able to free the I/O data terminal such that the EEPROM becomes electrically isolated from the CPU. The CPU is then able to perform data processing by the system bus where information can then be transferred/received such as between other memories, e.g., ROM and RAM, and otherwise with the I/O port.
申请公布号 US2006262605(A1) 申请公布日期 2006.11.23
申请号 US20060476745 申请日期 2006.06.29
申请人 发明人 SEKI KOICHI;WADA TAKESHI;MUTO TADASHI;SHOJI KAZUYOSHI;KUBOTA YASUROU;KUME HITOSHI
分类号 G11C16/04 主分类号 G11C16/04
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