SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, CAPACITOR STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device (11) is disclosed that includes an interposer (30) and a semiconductor chip (20). The interposer (30) includes a Si substrate (36); multiple through vias (43) provided through an insulating material (39) in corresponding through holes (38) passing through the Si substrate (36); a thin film capacitor (46) provided on a first main surface of the Si substrate (36) so as to be electrically connected to the through vias (43); and multiple external connection terminals (44) provided on a second main surface of the Si substrate (36) so as to be electrically connected to the through vias (43). The second main surface faces away from the first main surface. The semiconductor chip (20) is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias (43). The Si substrate (36) has a thickness less than the diameter of the through holes.