NON-VOLATILE MEMORY DEVICE WITH QUANTUM DOT AND METHOD FOR MANUFACTURING THE SAME

摘要

A nonvolatile memory device and a manufacturing method thereof are provided to reduce the consumption of power, to improve a processing rate, and to enhance the degree of integration by using a conductive organic layer and a quantum dot layer. A nonvolatile memory device includes upper and lower conductive layers(20,60), a conductive organic layer, and a quantum dot layer. The conductive organic layer(30,50) is formed between the upper and the lower conductive layer. The conductive organic layer has bi-stable conductive characteristics. The quantum dot layer(40) is formed in the conductive organic layer. The quantum dot layer contains quantum dots made of a crystalline material and an amorphous material for enclosing the quantum dots.