发明名称 THIN FILM TRANSISTOR ARRAY PANEL
摘要 A thin film transistor substrate is provided to maintain a uniform level of parasitic capacitance and minimize the fluctuation of the parasitic capacitance, thereby preventing flicker defect. A gate line(22) having a gate electrode(26) is extended horizontally. A semiconductor layer(40) is formed above the gate electrode. A data line(62) is extended vertically to cross the gate line, and has a source electrode(65) overlapping the semiconductor layer. A drain electrode(66) is disposed to face the source electrode, and overlaps the semiconductor layer. A pixel electrode(82) is electrically connected to the drain electrode. The pixel electrode is divided into a plurality of small domains by domain dividing members(82b).
申请公布号 KR20060118208(A) 申请公布日期 2006.11.23
申请号 KR20050040757 申请日期 2005.05.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAEK, SEUNG SOO;KIM, DONG GYU;SHIN, AE
分类号 G02F1/1343 主分类号 G02F1/1343
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