发明名称 Pattern forming method and method of manufacturing semiconductor device
摘要 A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
申请公布号 US2006263726(A1) 申请公布日期 2006.11.23
申请号 US20060431823 申请日期 2006.05.11
申请人 ITO SHINICHI;MATSUNAGA KENTARO;KAWAMURA DAISUKE;ONISHI YASUNOBU 发明人 ITO SHINICHI;MATSUNAGA KENTARO;KAWAMURA DAISUKE;ONISHI YASUNOBU
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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