发明名称 |
Light-emitting device, method for making the same, and nitride semiconductor substrate |
摘要 |
<p>A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type Al x Ga 1-x N layer 3 on a first main surface side of the GaN substrate 1; a p-type Al x Ga 1-x N layer 5 positioned further away from the GaN substrate 1 compared to the n-type Al x Ga 1-x N layer 3; a multi-quantum well (MQW) 4 positioned between the n-type Al x Ga 1-x N layer 3 and the p-type Al x Ga 1-x N layer 5. In this light-emitting device, the p-type Al x Ga 1-x N layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.</p> |
申请公布号 |
EP1724845(A2) |
申请公布日期 |
2006.11.22 |
申请号 |
EP20050026744 |
申请日期 |
2005.12.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAGAI, YOUCHI;KATAYAMA,KOJI;KITABAYASHI, HIROYUKI |
分类号 |
H01L33/00;H01L33/06;H01L33/32;H01L33/36;H01L33/54;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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