CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

An image sensor and a method for manufacturing the same are provided to restrain the contact resistance and the micro loading effect by constantly maintaining overlay of a contact line. An image sensor has a shared structure for sharing a floating diffusion region(FD) isolated between photodiodes(PD1,PD2) to an adjacent pixel. A driver transistor outputs and amplifies charges accumulated in the floating region. At this time, a gate electrode of the driver transistor is elongated. That is, the gate electrode of the driver transistor is directly connected to the floating diffusion region without using a connection part.