| 摘要 |
A single through-the-focus exposure of a semiconductor wafer (51) is achieved by a lithographic projection apparatus, which has the capability of generating an exposure profile comprising substantially two separate portions (20, 21), or maxima, of exposure light (40). Both portions (20, 21) of the light are directed to the mask (50), on which the pattern is formed. The mask (50) is thus exposed coincidently, but on separately located surface positions. Two different patterned portions (40, 41) of the exposure light (40) are then focused onto the wafer (51). In a preferred embodiment, the two portions (20, 21) are generated by means of a double slit (30, 31). The exposure is combined with a continuous through-the-focus exposure, wherein a tilt is applied to the wafer stage.
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