| 发明名称 |
Method for forming fully silicided gates and devices obtained thereby |
| 摘要 |
A method for manufacturing fully silicided (FUSI) gates and devices, in particular MOSFET devices, is described. In a method of the invention, the silicide phase can be effectively controlled.
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| 申请公布号 |
EP1724818(A2) |
申请公布日期 |
2006.11.22 |
| 申请号 |
EP20060114050 |
申请日期 |
2006.05.16 |
| 申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC);TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KITTL, JORGE ADRIAN |
| 分类号 |
H01L21/8234;H01L21/28;H01L21/8238;H01L29/49 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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