发明名称 |
POLISHING AGENT AND POLISHING METHOD |
摘要 |
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of semiconductor integrated circuit devices comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1:
wherein R is a hydrogen atom, a C 1-4 alkyl group, a C 1-4 alkoxy group or a carboxylic acid group.
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申请公布号 |
EP1724819(A1) |
申请公布日期 |
2006.11.22 |
申请号 |
EP20050720184 |
申请日期 |
2005.03.07 |
申请人 |
ASAHI GLASS COMPANY, LIMITED;SEIMI CHEMICAL CO., LTD. |
发明人 |
TAKEMIYA, SATOSHI;SHINMARU, SACHIE, |
分类号 |
H01L21/304;B24B37/00;C09K3/14;H01L21/3105;H01L21/321 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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