| 摘要 |
A an aspect of the present invention, a semiconductor device includes a lead frame having a lower base structure of oxygen free copper or copper-based alloy and having terminals; a semiconductor chip connected with the terminals of the lead frame; and a mold resin configured to cover the semiconductor chip. The lead frame has an exposed portion from the mold resin, and the exposed portion includes a diffusion prevention film formed on or above the lower base structure of the lead frame; and a Sn-Bi (tin-bismuth) film formed on the diffusion prevention film. |
