| 摘要 |
A method for forming a metal line of a semiconductor device is provided to improve reliability of the device by removing completely residues containing F from a via and a trench using a cleaning process under a B2H6 gas condition. An interlayer dielectric is formed on a substrate(100). A via is formed in the interlayer dielectric. A trench for exposing the via to the outside is formed on the resultant structure. A cleaning process is performed on the resultant structure under a B2H6 gas condition in order to remove completely residues containing fluorine from the via and trench. A diffusion barrier(112) and a copper film(114) are sequentially formed on the resultant structure in order to fill the via and trench. At this time, a metal line(116) is formed on the resultant structure.
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