发明名称 |
Replacement gate with TERA cap |
摘要 |
A field effect transistor formed by a sacrificial gate process has a simplified process and improved yield by using a tunable resistant anti-reflective coating (TERA) as the cap layer over the sacrificial gate layer. The TERA layer serves as a tunable anti-reflection layer for photolithography patterning, a hardmask for etching the sacrificial gate, a polish stopping layer for planarization, and a blocking layer for preventing silicide formation over the sacrificial gate. The TERA is stripped by a two-step process that is highly selective to the nitride spacers, so that the spacers are not damaged in the process of stripping the sacrificial gate.
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申请公布号 |
US7138308(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20040905070 |
申请日期 |
2004.12.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DIVAKARUNI RAMACHANDRA;SETTLEMYER, JR. KENNETH T. |
分类号 |
H01L21/336;H01L21/302;H01L21/3205;H01L21/4763;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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