METHOD FOR MORNITERING EDGE BEAD REMOVAL PROCESS OF COPPER METALLIZATION LAYER

摘要

A method for monitoring an edge bead removal state of a copper line is provided to check stably easily the existence of copper residues after an edge bead removal process by using a reflectivity measurement of a wafer edge portion. A copper film is formed on a semiconductor wafer(W). The copper film is selectively removed from an edge portion(B) of the wafer. The existence of copper residues is monitored by measuring a first reflectivity and a second reflectivity. The first reflectivity is obtained from the copper film of a center portion of the wafer. The second reflectivity is obtained from the edge portion of the wafer. The second reflectivity is continuously measured along the edge portion of the wafer.