发明名称 |
Semiconductor device and fabrication method therefor |
摘要 |
An n-type channel diffused layer and an n-type well diffused layer are formed in the top portion of a semiconductor substrate, and a gate insulating film and a gate electrode are formed on the semiconductor substrate. Using the gate electrode as a mask, boron and arsenic are implanted to form p-type extension implanted layers and n-type pocket impurity implanted layers. Fluorine is then implanted using the gate electrode as a mask to form fluorine implanted layers. The resultant semiconductor substrate is subjected to rapid thermal annealing, forming p-type high-density extension diffused layers and n-type pocket diffused layers. Sidewalls and p-type high-density source/drain diffused layers are then formed.
|
申请公布号 |
US7138322(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20040775122 |
申请日期 |
2004.02.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NODA TAIJI |
分类号 |
H01L21/265;H01L21/22;H01L21/28;H01L21/324;H01L21/336;H01L21/425;H01L29/06;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|