| 摘要 |
An MOS transistor is provided to perform various current control processes and improve remarkably a current driving capability by using an additional buried gate. An MOS transistor comprises a first conductive type well region(12), a second conductive type source region(35) in the well region, a second conductive type drain region(34) in the well region, a first gate and a second gate. The first gate(33) is formed on the well region via an oxide layer. The first gate is used for controlling the formation of a first channel region between the source and drain regions. The second gate(39) is formed under the first channel region.
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