MANUFACTURING METHOD OF CAPACITOR

摘要

A method for manufacturing a capacitor is provided to simplify the manufacturing process and to reduce defects by simultaneously etching upper and lower electrodes. A lower electrode layer is formed on a silicon substrate(122). A dielectric film is formed on the lower electrode layer. A dielectric pattern(140) is formed by etching selectively the dielectric film. An upper electrode layer is formed on the resultant structure. An upper electrode(142) and a lower electrode(134) are formed by simultaneously etching the upper and the lower electrode layer.