发明名称 Systems for forming insulative coatings for via holes in semiconductor devices
摘要 An insulative coating for an aperture of a semiconductor device component includes a plurality of adjacent, mutually adhered regions. The adjacent, mutually adhered regions may be formed by programmed material consolidation processes, such as stereolithography. Such an insulative coating may electrically isolate conductive features, such as conductive vias, from the substrate of a semiconductor device component.
申请公布号 US7138334(B2) 申请公布日期 2006.11.21
申请号 US20050212226 申请日期 2005.08.25
申请人 MICRON TECHNOLOGY, INC. 发明人 FARNWORTH WARREN M.
分类号 H01L21/4763;G03F7/00;H01L21/302;H01L21/44;H01L21/461;H01L21/48;H01L21/68;H01L21/768;H01L23/48;H01L23/498;H05K3/00;H05K3/44 主分类号 H01L21/4763
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