发明名称 |
Semiconductor integrated circuit apparatus |
摘要 |
Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.
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申请公布号 |
US7138851(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20030689554 |
申请日期 |
2003.10.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUMITA MASAYA;SAKIYAMA SHIROU;KINOSHITA MASAYOSHI |
分类号 |
H01L27/04;H03K3/01;H01L21/822;H03K19/00;H03K19/003 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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