发明名称 Semiconductor integrated circuit apparatus
摘要 Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.
申请公布号 US7138851(B2) 申请公布日期 2006.11.21
申请号 US20030689554 申请日期 2003.10.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SUMITA MASAYA;SAKIYAMA SHIROU;KINOSHITA MASAYOSHI
分类号 H01L27/04;H03K3/01;H01L21/822;H03K19/00;H03K19/003 主分类号 H01L27/04
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