| 摘要 |
A refresh control device of a memory device is provided to reduce current consumption required in a refresh operation by extending a refresh period as to a bank with good refresh characteristics. In a refresh control device of a memory device comprising a bank, a switching part selectively receives a first auto refresh command and a second auto refresh command. A logic assembly part outputs a signal for activating the bank in response to an output signal of the switching part. The generation period of the first auto refresh command is shorter than the generation period of the second auto refresh command. The logic assembly part receives an active signal for enabling the bank and a self refresh command signal for enabling a self refresh operation of the bank.
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