| 摘要 |
<p>A method for forming a gate in a semiconductor device is provided to reduce the effective thickness of a gate oxide layer and the leakage current by using a HfTbO dielectric film with high permittivity as the gate oxide layer. A semiconductor substrate(1) having an isolation layer(2) is prepared. A silicon-based oxide layer(3) is formed on the substrate. A HfTbO layer(4) as a gate oxide layer is formed on the silicon-based oxide layer. The resultant structure is treated by N2O plasma and annealed under a high temperature. A barrier metal film(5) and a gate metal film(6) are sequentially formed on the resultant structure. A gate(8) is then formed by patterning the gate metal film, the barrier metal film, the HfTbO layer and the silicon-based oxide layer.</p> |
